IndiumV3, Main, Repository, bibRecord, 00DA29

An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)

Identifieur interne : 00DA29 ( Main/Repository ); précédent : 00DA28; suivant : 00DA30

An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)

Auteurs : RBID : Pascal:03-0283751

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Hétérojonction, Couche mince, Fer, Semiconducteur III-V, Indium arséniure, Gallium arséniure, Recuit thermique, Réaction interface, Interface solide solide, Diffusion(transport), Diffusion mutuelle, Etude phase, Microstructure, Diffraction RX, Effet Mössbauer, 6835F, Fe, In0,5Ga0,5As, As Ga In.
Wicri :
- concept : Fer.

English descriptors

KwdEn :
- Diffusion, Experimental study, Gallium arsenides, Heterojunctions, III-V semiconductors, Indium arsenides, Interdiffusion, Interface reaction, Iron, Microstructure, Moessbauer effect, Phase studies, Solid-solid interfaces, Thermal annealing, Thin films, XRD.

Abstract

Polycrystalline iron thin films on ion-etched monocrystalline In_0.5Ga_0.5As/InP (001) substrates were prepared using ion-beam sputtering deposition. The interface reaction was characterised by X-ray diffraction and conversion electron Mössbauer spectroscopy experiments, after annealing in vacuum for 1 h at temperatures between 350 an 450°C. Interdiffusion phenomena mainly result in the formation of five new phases, namely metallic-In, InAs, Fe₂As, Fe₂In_xAs_1-x (0 ≤ x ≤ 0.2) and Fe₃Ga_2-xAs_x (x = 0.2-0.3), in agreement with the predictions of the phase diagrams. InAs results from the decomposition of the semiconductor substrate and remains (001)-textured. The iron-arsenide grains grow into the substrate below the Fe/In_0.5Ga_0.5As interface. The In precipitates reach ∼ 40 nm in size after 1 h annealing at 450 °C, while the Fe₃Ga_2-xAs_x phase appears at 400-450°C with an either textured or disordered structure. Finally, the overall activation energy for the thermal reaction is calculated to be 1.5 eV in the latter temperature range.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00D216

Links to Exploration step

Pascal:03-0283751

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In<sub>0.5</sub>
Ga<sub>0.5</sub>
As (001)</title>
<author><name sortKey="Monteverde, F" uniqKey="Monteverde F">F. Monteverde</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Métallurgie Physique, UMR 6630 CNRS-Université de Poitiers, bâtiment SP2MI, Téléport 2, boulevard Marie et Pierre Curie, BP 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Poitou-Charentes</region>
<settlement type="city">Futuroscope-Chasseneuil</settlement>
</placeName>
<orgName type="university">Université de Poitiers</orgName>
</affiliation>
</author>
<author><name sortKey="Michel, A" uniqKey="Michel A">A. Michel</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Métallurgie Physique, UMR 6630 CNRS-Université de Poitiers, bâtiment SP2MI, Téléport 2, boulevard Marie et Pierre Curie, BP 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Poitou-Charentes</region>
<settlement type="city">Futuroscope-Chasseneuil</settlement>
</placeName>
<orgName type="university">Université de Poitiers</orgName>
</affiliation>
</author>
<author><name sortKey="Fnidiki, A" uniqKey="Fnidiki A">A. Fnidiki</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Groupe de Physique des Matériaux, UMR 6634 CNRS-Université de Rouen, Faculté des Sciences et des Techniques de Rouen, place Emile Blondel</s1>
<s2>76821 Mont-Saint-Aignan</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Haute-Normandie</region>
<settlement type="city">Mont-Saint-Aignan</settlement>
</placeName>
<orgName type="university">Université de Rouen</orgName>
</affiliation>
</author>
<author><name sortKey="Eymery, J P" uniqKey="Eymery J">J.-P. Eymery</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Métallurgie Physique, UMR 6630 CNRS-Université de Poitiers, bâtiment SP2MI, Téléport 2, boulevard Marie et Pierre Curie, BP 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Poitou-Charentes</region>
<settlement type="city">Futuroscope-Chasseneuil</settlement>
</placeName>
<orgName type="university">Université de Poitiers</orgName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0283751</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0283751 INIST</idno>
<idno type="RBID">Pascal:03-0283751</idno>
<idno type="wicri:Area/Main/Corpus">00D216</idno>
<idno type="wicri:Area/Main/Repository">00DA29</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1286-0042</idno>
<title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title>
<title level="j" type="main">EPJ. Applied physics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Diffusion</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Heterojunctions</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Interdiffusion</term>
<term>Interface reaction</term>
<term>Iron</term>
<term>Microstructure</term>
<term>Moessbauer effect</term>
<term>Phase studies</term>
<term>Solid-solid interfaces</term>
<term>Thermal annealing</term>
<term>Thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Hétérojonction</term>
<term>Couche mince</term>
<term>Fer</term>
<term>Semiconducteur III-V</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Recuit thermique</term>
<term>Réaction interface</term>
<term>Interface solide solide</term>
<term>Diffusion(transport)</term>
<term>Diffusion mutuelle</term>
<term>Etude phase</term>
<term>Microstructure</term>
<term>Diffraction RX</term>
<term>Effet Mössbauer</term>
<term>6835F</term>
<term>Fe</term>
<term>In0,5Ga0,5As</term>
<term>As Ga In</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Fer</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Polycrystalline iron thin films on ion-etched monocrystalline In<sub>0.5</sub>
Ga<sub>0.5</sub>
As/InP (001) substrates were prepared using ion-beam sputtering deposition. The interface reaction was characterised by X-ray diffraction and conversion electron Mössbauer spectroscopy experiments, after annealing in vacuum for 1 h at temperatures between 350 an 450°C. Interdiffusion phenomena mainly result in the formation of five new phases, namely metallic-In, InAs, Fe<sub>2</sub>
As, Fe<sub>2</sub>
In<sub>x</sub>
As<sub>1-x</sub>
 (0 ≤ x ≤ 0.2) and Fe<sub>3</sub>
Ga<sub>2-x</sub>
As<sub>x</sub>
 (x = 0.2-0.3), in agreement with the predictions of the phase diagrams. InAs results from the decomposition of the semiconductor substrate and remains (001)-textured. The iron-arsenide grains grow into the substrate below the Fe/In<sub>0.5</sub>
Ga<sub>0.5</sub>
As interface. The In precipitates reach ∼ 40 nm in size after 1 h annealing at 450 °C, while the Fe<sub>3</sub>
Ga<sub>2-x</sub>
As<sub>x</sub>
 phase appears at 400-450°C with an either textured or disordered structure. Finally, the overall activation energy for the thermal reaction is calculated to be 1.5 eV in the latter temperature range.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1286-0042</s0>
</fA01>
<fA03 i2="1"><s0>EPJ, Appl. phys. : (Print)</s0>
</fA03>
<fA05><s2>21</s2>
</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In<sub>0.5</sub>
Ga<sub>0.5</sub>
As (001)</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MONTEVERDE (F.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MICHEL (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>FNIDIKI (A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>EYMERY (J.-P.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Métallurgie Physique, UMR 6630 CNRS-Université de Poitiers, bâtiment SP2MI, Téléport 2, boulevard Marie et Pierre Curie, BP 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Groupe de Physique des Matériaux, UMR 6634 CNRS-Université de Rouen, Faculté des Sciences et des Techniques de Rouen, place Emile Blondel</s1>
<s2>76821 Mont-Saint-Aignan</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>179-185</s1>
</fA20>
<fA21><s1>2003</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>26690</s2>
<s5>354000104293980030</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2003 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>46 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>03-0283751</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>EPJ. Applied physics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>FRA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Polycrystalline iron thin films on ion-etched monocrystalline In<sub>0.5</sub>
Ga<sub>0.5</sub>
As/InP (001) substrates were prepared using ion-beam sputtering deposition. The interface reaction was characterised by X-ray diffraction and conversion electron Mössbauer spectroscopy experiments, after annealing in vacuum for 1 h at temperatures between 350 an 450°C. Interdiffusion phenomena mainly result in the formation of five new phases, namely metallic-In, InAs, Fe<sub>2</sub>
As, Fe<sub>2</sub>
In<sub>x</sub>
As<sub>1-x</sub>
 (0 ≤ x ≤ 0.2) and Fe<sub>3</sub>
Ga<sub>2-x</sub>
As<sub>x</sub>
 (x = 0.2-0.3), in agreement with the predictions of the phase diagrams. InAs results from the decomposition of the semiconductor substrate and remains (001)-textured. The iron-arsenide grains grow into the substrate below the Fe/In<sub>0.5</sub>
Ga<sub>0.5</sub>
As interface. The In precipitates reach ∼ 40 nm in size after 1 h annealing at 450 °C, while the Fe<sub>3</sub>
Ga<sub>2-x</sub>
As<sub>x</sub>
 phase appears at 400-450°C with an either textured or disordered structure. Finally, the overall activation energy for the thermal reaction is calculated to be 1.5 eV in the latter temperature range.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H35F</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>240</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Hétérojonction</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Heterojunctions</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Fer</s0>
<s2>NC</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Iron</s0>
<s2>NC</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Recuit thermique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Thermal annealing</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Recocido térmico</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Réaction interface</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Interface reaction</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Reacción interfase</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Interface solide solide</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Solid-solid interfaces</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Diffusion(transport)</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Diffusion</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Diffusion mutuelle</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Interdiffusion</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Difusión mútua</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Etude phase</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Phase studies</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Microstructure</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Microstructure</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>XRD</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Effet Mössbauer</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Moessbauer effect</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>6835F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Fe</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>In0,5Ga0,5As</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>17</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>17</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Métal transition</s0>
<s5>18</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Transition elements</s0>
<s5>18</s5>
</fC07>
<fN21><s1>181</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00DA29 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00DA29 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:03-0283751
   |texte=   An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)

An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri